The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Apr. 17, 2003
Applicants:
Deak-su Lee, Taoyuan Hsien, TW;
Sakae Tanaka, Taoyuan Hsien, TW;
Inventors:
Deak-Su Lee, Taoyuan Hsien, TW;
Sakae Tanaka, Taoyuan Hsien, TW;
Assignee:
Hannstar Display Corporation, Taipei, TW;
Primary Examiner:
Int. Cl.
CPC ...
G02F001/136 ; G02F001/1345 ;
U.S. Cl.
CPC ...
Abstract
A method of manufacturing an IPS-LCD using a 4-mask process including forming amorphous silicon islands and contact holes using the same mask. Each amorphous silicon island is used to form the channel of one transistor inside the active area, and each contact hole is used to form a portion of an anti-ESD circuit around the active area. Amorphous silicon islands and the contact holes are also found using a phase-shaft mask. The phase shift mask at least includes a high transmittance area, a low transmittance area, and a transparent area.