The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Oct. 10, 2001
Hao-chiao Hong, Hsinchu, TW;
Hao-Chiao Hong, Hsinchu, TW;
Abstract
A bandgap voltage reference generator includes a bandgap voltage reference circuit and a fast startup circuit. The fast start-up circuit, which is cost-efficient and saves power consumption, can rapidly start up the bandgap reference voltage circuit coupled thereto. The fast start-up circuit comprises a P-channel MOSFET or an N-channel MOSFET. Upon the bandgap voltage reference generator being powered by an external DC voltage, the bandgap reference generator will possibly operate in the power-down operating state. At this time there exists a large voltage drop between the gate and the source of the P-channel MOSFET (or N-channel MOSFET), and thus a large current flows rapidly through the P-channel MOSFET (or N-channel MOSFET). Voltages of drains of two specific MOSFETs in the bandgap voltage reference circuit will thus be pulled to be substantially the same, and the bandgap voltage reference circuit is brought into a normal operating state. The output of the bandgap reference generator is then very close to the bandgap voltage of silicon.