The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Nov. 27, 2002
Applicant:
M. Reaz Shaheed, Portland, OR (US);
Inventor:
M. Reaz Shaheed, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L031/0328 ;
U.S. Cl.
CPC ...
Abstract
A bipolar transistor having a collector connected to a base, the collector including an amount of carbon sufficient to prevent a conduction band barrier at a base-collector junction.
Shaheed, M.. (2005). Silicon germanium heterojunction bipolar transistor with step-up carbon profile (U.S. Patent No. 6972441). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6972441
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile