The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2005
Filed:
Nov. 13, 2002
Applicants:
Chih-jung Wang, Hsinchu, TW;
Tong-yu Chen, Hsinchu, TW;
Inventors:
Chih-Jung Wang, Hsinchu, TW;
Tong-Yu Chen, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract
The invention is directed towards a method for forming openings in low-k dielectric layers and a structure for forming an opening thereof. A mask layer comprising at least one metal hard mask layer and one or more hard mask layers is applied on the dielectric layer for forming the opening.