The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6972235 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 06, 2005

Filed:

Sep. 16, 2003
Applicants:

Tsukasa Yonekawa, Tokyo, JP;

Keisuke Suzuki, Tokyo, JP;

Inventors:

Tsukasa Yonekawa, Tokyo, JP;

Keisuke Suzuki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract

A method of processing a semiconductor substrate includes a step of forming a trench () in a surface of the substrate, by etching the substrate (W), and a step of rounding a corner () of the substrate formed at a mouth of the trench (), by heat-processing the substrate (W). The step of rounding the corner () includes a first heat process performed in a hydrogen gas atmosphere with a process temperature T set to be 850° C.<T<1,050° C., and a process pressure P set to be 0.01 kPa<P<30 kPa.


Find Patent Forward Citations

Yonekawa, Tsukasa. (2005). Method for processing semiconductor substrate (U.S. Patent No. 6972235). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6972235

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