The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2005
Filed:
Feb. 24, 2004
Applicant:
Shih-chin Lin, Hsin-Chu Hsien, TW;
Inventor:
Shih-Chin Lin, Hsin-Chu Hsien, TW;
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C011/00 ;
U.S. Cl.
CPC ...
Abstract
A static random access memory (SRAM) has a plurality of SRAM cells, a first switch unit, a second switch unit, and a capacitor. During read/write operations of the SRAM cells, the first switch unit and the second switch unit are turned on so that two power terminals of the SRAM cells respectively electrically connect to Vand Vand that the capacitor electrically connects between Vand V. When the SRAM cells are not accessed, the first switch unit and the second switch unit are turned off and the capacitor keeps a voltage gap between the two power terminals of the SRAM cells greater than a predetermined value.