The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2005
Filed:
Mar. 10, 2004
Wen-chau Liu, Tainan, TW;
Huey-ing Chen, Tainan, TW;
Kun-wei Lin, Tou-Liu, TW;
Chun-tsen LU, Hsin-Tien, TW;
Wen-Chau Liu, Tainan, TW;
Huey-Ing Chen, Tainan, TW;
Kun-Wei Lin, Tou-Liu, TW;
Chun-Tsen Lu, Hsin-Tien, TW;
National Cheng Kung University, Tainan, TW;
Abstract
A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula XYZ, in which X is a Group III element, Y is another Group III element different from X, and Z is a Group V element, a semiconductor contact-enhancing layer formed on the active layer and made from a compound having the formula MN, in which M is a Group III element, and N is a Group V element, an ohmic contact layer formed on the semiconductor contact-enhancing layer, and a Schottky barrier contact layer formed on the active layer. The Schottky barrier contact layer is made from a metal that is capable of dissociating a hydrogen molecule into hydrogen atoms.