The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2005
Filed:
Sep. 24, 2003
Edmund Burke, Dallas, TX (US);
Benjamin P. Mckee, Richardson, TX (US);
Frank S. Johnson, Richardson, TX (US);
Edmund Burke, Dallas, TX (US);
Benjamin P. McKee, Richardson, TX (US);
Frank S. Johnson, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A capacitive structure (). The capacitive structure comprises a semiconductor base region () having an upper surface, a well () formed within the semiconductor base region and adjacent the upper surface, a first dielectric layer () adjacent at least a portion of the upper surface, and a polysilicon layer () adjacent the first dielectric layer. The well, the first dielectric layer, and the first polysilicon layer form a first capacitor and are aligned along a planar dimension. The capacitive structure further comprises a first conductive layer () positioned with at least a portion overlying at least a portion of the polysilicon layer, a second dielectric layer () adjacent the first conductive layer, and a second conductive layer () adjacent the second dielectric layer. The first conductive layer, the second dielectric layer, and the second conductive layer form a second capacitor and are aligned along the planar dimension.