The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2005
Filed:
Feb. 26, 2004
Robert F. Steimle, Austin, TX (US);
Jane A. Yater, Austin, TX (US);
Gowrishankar L. Chindalore, Austin, TX (US);
Craig T. Swift, Austin, TX (US);
Steven G. H. Anderson, Austin, TX (US);
Ramachandran Muralidhar, Austin, TX (US);
Robert F. Steimle, Austin, TX (US);
Jane A. Yater, Austin, TX (US);
Gowrishankar L. Chindalore, Austin, TX (US);
Craig T. Swift, Austin, TX (US);
Steven G. H. Anderson, Austin, TX (US);
Ramachandran Muralidhar, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
Nanoclusters are blanket deposited on an integrated circuit and then removed from regions where the nanoclusters are not desired. A sacrificial layer is formed in those regions where the nanoclusters are not desired prior to the blanket deposition. The nanoclusters and the sacrificial layer are then removed. In one form, the sacrificial layer includes a deposited nitride containing or oxide containing layer. Alternatively, the sacrificial layer includes at least one of a pad oxide or a pad nitride layer previously used to form isolation regions in the substrate. Nanocluster devices and non-nanocluster devices may then be integrated onto the same integrated circuit. The use of a sacrificial layer protects underlying layers thereby preventing the degradation of performance of the subsequently formed non-nanocluster devices.