The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2005
Filed:
Jan. 09, 2003
Matthias Passlack, Chandler, AZ (US);
Olin L. Hartin, Phoenix, AZ (US);
Marcus Ray, Tempe, AZ (US);
Nicholas Medendorp, Santa Barbara, CA (US);
Matthias Passlack, Chandler, AZ (US);
Olin L. Hartin, Phoenix, AZ (US);
Marcus Ray, Tempe, AZ (US);
Nicholas Medendorp, Santa Barbara, CA (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
An implant-free enhancement mode metal-oxide semiconductor field effect transistor (EMOSFET) is provided. The EMOSFET has a III-V compound semiconductor substrate and an epitaxial layer structure overlying the III-V compound semiconductor substrate. The epitaxial material layer has a channel layer and at least one doped layer. A gate oxide layer overlies the epitaxial layer structure. The EMOSFET further includes a metal gate electrode overlying the gate oxide layer and source and drain ohmic contacts overlying the epitaxial layer structure.