The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2005
Filed:
Dec. 10, 2002
Applicant:
Heung L. Park, Wilsonville, OR (US);
Inventor:
Heung L. Park, Wilsonville, OR (US);
Assignee:
Novellus Systems, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/4763 ;
U.S. Cl.
CPC ...
Abstract
A method describing a low temperature process of forming a cobalt nitride layer using electroless deposition, followed by a nitridation step, is disclosed. The process described is useful in integrated circuit device fabrication applications, especially those involving the use of copper. The invention can be used to create a highly effective capping layer in high interconnect copper devices.
Quick Actions:
Park, Heung. (2005). Nitridation of electrolessly deposited cobalt (U.S. Patent No. 6962873). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6962873
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