The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Oct. 10, 2003
Chih-yuh Yang, San Jose, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Judy Xilin an, San Jose, CA (US);
Srikanteswara Dakshina-murthy, Austin, TX (US);
Bin Yu, Cupertino, CA (US);
Chih-Yuh Yang, San Jose, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Judy Xilin An, San Jose, CA (US);
Srikanteswara Dakshina-Murthy, Austin, TX (US);
Bin Yu, Cupertino, CA (US);
Hussman Corporation, Bridgeton, MO (US);
Abstract
A double-semiconductor device includes a substrate, an insulating layer, a fin and a gate. The insulating layer is formed on the substrate and the fin is formed on the insulating layer. The fin has a number of side surfaces, a top surface and a bottom surface. The gate is formed on the insulating layer and surrounds the top surface, bottom surface and the side surfaces of the fin in the channel region of the semiconductor device. Surrounding the fin with gate material results in an increased total channel width and more flexible device adjustment margins.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile