The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
Feb. 11, 2004
Applicants:
You-cheol Shin, Kyunggi-do, KR;
Kyu-charn Park, Kyunggi-do, KR;
Won-hong Lee, Kyunggi-do, KR;
Jung-dal Choi, Kyunggi-do, KR;
Inventors:
You-Cheol Shin, Kyunggi-do, KR;
Kyu-Charn Park, Kyunggi-do, KR;
Won-Hong Lee, Kyunggi-do, KR;
Jung-Dal Choi, Kyunggi-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/336 ; H01L021/8238 ; H01L021/4763 ;
U.S. Cl.
CPC ...
Abstract
A semiconductor device comprises a plurality of gate lines composed of line shapes to function as gate electrodes in a plurality of transistors and separated from a substrate by a gate insulating layer, each having an upper metal silicide layer; and a plurality of source/drain regions formed on the substrate between said gate lines solely by carrying out impurity implantation processes.