The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2005
Filed:
May. 26, 2004
Applicants:
Michael Vyvoda, San Jose, CA (US);
S. Brad Herner, San Jose, CA (US);
Inventors:
Michael Vyvoda, San Jose, CA (US);
S. Brad Herner, San Jose, CA (US);
Assignee:
Matrix Semiconductor, Inc, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L021/82 ;
U.S. Cl.
CPC ...
Abstract
A method for forming a contact in a three dimensional monolithic memory is disclosed. In a preferred embodiment, the method comprises depositing a conductive layer over and in contact with a plurality of antifuses, wherein said antifuses are part of a story of active devices formed above a substrate; patterning and etching said conductive layer and insulating dielectric to form a contact void; and filling the contact void, wherein the conductive layer does not comprise silicon.