The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2005

Filed:

Nov. 15, 2002
Applicants:

Tso-hung Fan, Taipei Hsien, TW;

Chih-chieh Yeh, Taipei, TW;

Tao-cheng LU, Kaoshiung, TW;

Inventors:

Tso-Hung Fan, Taipei Hsien, TW;

Chih-Chieh Yeh, Taipei, TW;

Tao-Cheng Lu, Kaoshiung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C016/02 ;
U.S. Cl.
CPC ...
Abstract

A programming method of the multi-level flash memory comprises shooting a programming voltage that is increasing upwards stepwise each time into the gate of the multi-level flash memory, and following, shooting a program verify voltage that is decreasing downwards to program a multi-level in the multi-level flash memory and shooting an additional programming voltage into the multi-level flash memory after the last program verify voltage is shot. An erasing method of the multi-level flash memory comprises shooting an erasing voltage that is decreasing downwards stepwise each time into a gate of the multi-level flash memory, and following, shooting a erase verify voltage that is increasing upwards to erase a multi-level in the multi-level flash memory and shooting an additional voltage into the multi-level flash memory after the last erase verify voltage is shot.


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