The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2005

Filed:

Sep. 18, 2001
Applicants:

Catherine Mallardeau, Grenoble, FR;

Pascale Mazoyer, Grenoble, FR;

Marc Piazza, Pontcharra, FR;

Inventors:

Catherine Mallardeau, Grenoble, FR;

Pascale Mazoyer, Grenoble, FR;

Marc Piazza, Pontcharra, FR;

Assignee:

STMicroelectronics S.A., Montrouge, FR;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L027/108 ;
U.S. Cl.
CPC ...
Abstract

There is provided an integrated circuit having active components including junctions formed in a monocrystalline substrate doped locally, and at least one passive component situated above the active components. The integrated circuit includes a first insulating layer separating the active components and abase of the passive component, and a metal terminal for electrically connecting the passive component with at least one of the active components. The metal terminal is formed in the thickness of the first insulating layer and has a contact surface that projects from the limits of a junction of the one active component. In a preferred embodiment, the passive component is a capacitor. Also provided is a method of fabricating an integrated circuit that includes MOS transistors and an onboard memory plane of DRAM cells in a matrix.


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