The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2005
Filed:
May. 27, 2003
M. Ziaul Karim, San Jose, CA (US);
Farhad K. Moghadam, Saratoga, CA (US);
Siamak Salimian, Sunnyvale, CA (US);
M. Ziaul Karim, San Jose, CA (US);
Farhad K. Moghadam, Saratoga, CA (US);
Siamak Salimian, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 10ions/cm. The process gas includes H, a silicon source, and an oxidizing gas reactant, and deposition into the gap is achieved using a process that has simultaneous deposition and sputtering components. The probability of forming a void is reduced by ensuring that the plasma has a greater density of ions having a single oxygen atom than a density of ions having more than one oxygen atom.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile