The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2005
Filed:
Sep. 17, 2003
Shahzad Khalid, West Los Angeles, CA (US);
Yan LI, Milpitas, CA (US);
Raul-adrian Cernea, Santa Clara, CA (US);
Mehrdad Mofidi, Fremont, CA (US);
Shahzad Khalid, West Los Angeles, CA (US);
Yan Li, Milpitas, CA (US);
Raul-Adrian Cernea, Santa Clara, CA (US);
Mehrdad Mofidi, Fremont, CA (US);
SanDisk Corporation, Sunnyvale, CA (US);
Abstract
When programming a contiguous page of memory storage units, every time a memory storage unit has reached its targeted state and is program-inhibited or locked out from further programming, it creates a perturbation on an adjacent memory storage unit still under programming. The present invention provides as part of a programming circuit and method in which an offset to the perturbation is added to the adjacent memory storage unit still under programming. The offset is added as voltage offset to a bit line of a storage unit under programming. The voltage offset is a predetermined function of whether none or one or both of its neighbors are in a mode that creates perturbation, such as in a program inhibit mode. In this way, an error inherent in programming in parallel high-density memory storage units is eliminated or minimized.