The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2005
Filed:
Feb. 24, 2003
Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer
Ju-young Yun, Seoul, KR;
Gil-heyun Choi, Kyungki-do, KR;
Byung-hee Kim, Seoul, KR;
Jong-myeong Lee, Kyungki-do, KR;
Seung-gil Yang, Kyungki-do, KR;
Jung-hun Seo, Gangwon-do, KR;
Ju-young Yun, Seoul, KR;
Gil-heyun Choi, Kyungki-do, KR;
Byung-hee Kim, Seoul, KR;
Jong-myeong Lee, Kyungki-do, KR;
Seung-gil Yang, Kyungki-do, KR;
Jung-hun Seo, Gangwon-do, KR;
Abstract
A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the dielectric layer pattern outside the hole. At least some of the barrier metal layer is oxidized. An anti-nucleation layer is selectively formed on the oxidized barrier metal layer outside the hole that exposes the oxidized barrier metal layer in the hole. A metal layer then is selectively formed on the exposed oxidized barrier layer in the hole.