The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2005
Filed:
Jul. 24, 2001
David P. Bour, Cupertino, CA (US);
Nathan F. Gardner, Mountain View, CA (US);
Werner K. Goetz, Palo Alto, CA (US);
Stephen A. Stockman, Morgan Hill, CA (US);
Tetsuya Takeuchi, Sunnyvale, CA (US);
Ghulam Hasnain, Palo Alto, CA (US);
Christopher P. Kocot, Palo Alto, CA (US);
Mark R. Hueschen, Palo Alto, CA (US);
David P. Bour, Cupertino, CA (US);
Nathan F. Gardner, Mountain View, CA (US);
Werner K. Goetz, Palo Alto, CA (US);
Stephen A. Stockman, Morgan Hill, CA (US);
Tetsuya Takeuchi, Sunnyvale, CA (US);
Ghulam Hasnain, Palo Alto, CA (US);
Christopher P. Kocot, Palo Alto, CA (US);
Mark R. Hueschen, Palo Alto, CA (US);
Lumileds Lighting U.S., LLC, San Jose, CA (US);
Abstract
A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.