The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2005
Filed:
Oct. 17, 2002
Ryuji Kohno, Chiyoda, JP;
Hideo Miura, Koshigaya, JP;
Masatoshi Kanamaru, Miho, JP;
Hiroya Shimizu, Ryugasaki, JP;
Hideyuki Aoki, Takasaki, JP;
Ryuji Kohno, Chiyoda, JP;
Hideo Miura, Koshigaya, JP;
Masatoshi Kanamaru, Miho, JP;
Hiroya Shimizu, Ryugasaki, JP;
Hideyuki Aoki, Takasaki, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device has forming process for forming a semiconductor device on a major surface of a wafer, and testing process for testing defect of the semiconductor device formed on the wafer. The testing process includes a step bringing a testing apparatus into contact with test electrodes of the semiconductor device. The testing apparatus has a contactor including a plurality of probes that come into contact with the test electrodes of the semiconductor device to be tested, and secondary electrodes electrically connected to the probes and disposed on a surface opposite to the probes; a substrate on which electrodes electrically communicated to the contactor by a conducting device. The conducting device is so formed that stress applied to the conducting device in the state where the probes are in contact with the test electrodes is larger than stress applied to the conducting device in the state where the probes are not in contact with the test electrodes.