The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2005
Filed:
Apr. 29, 2003
Harald Seidl, Feldkirchen, DE;
Martin Gutsche, Dorfen, DE;
Thomas Hecht, Dresden, DE;
Stefan Jakschik, Dresden, DE;
Stephan Kudelka, Ottendorf-Okrilla, DE;
Uwe Schröder, Dresden, DE;
Matthias Schmeide, Langebrück, DE;
Harald Seidl, Feldkirchen, DE;
Martin Gutsche, Dorfen, DE;
Thomas Hecht, Dresden, DE;
Stefan Jakschik, Dresden, DE;
Stephan Kudelka, Ottendorf-Okrilla, DE;
Uwe Schröder, Dresden, DE;
Matthias Schmeide, Langebrück, DE;
Infineon Technologies AG, Munich, DE;
Abstract
In a method for forming patterned ceramic layers, a ceramic material is deposited on a substrate and is subsequently densified by heat treatment, for example. In this case, the initially amorphous material is converted into a crystalline or polycrystalline form. In order that the now crystalline material can be removed again from the substrate, imperfections are produced in the ceramic material, for example by ion implantation. As a result, the etching medium can more easily attack the ceramic material, so that the latter can be removed with a higher etching rate. Through inclined implantation, the method can be performed in a self-aligning manner and the ceramic material can be removed on one side, by way of example, in trenches or deep trench capacitors.