The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2005
Filed:
Oct. 14, 2003
Applicant:
Enzo Carollo, Brugherio, IT;
Inventor:
Enzo Carollo, Brugherio, IT;
Assignee:
STMicroelectronics S.r.l., , IT;
Primary Examiner:
Int. Cl.
CPC ...
H05H001/24 ;
U.S. Cl.
CPC ...
Abstract
A high-density plasma process is proposed for depositing a layer of Silicon Nitride on a substrate in a plasma reactor. The process includes the steps of: providing a gas including precursor components of the Silicon Nitride, generating a plasma applying a radio-frequency power to the gas, and the plasma reacting with the substrate to deposit the layer of Silicon Nitride. The power applied to the gas is in the range from 2.5 kW to 4 kW.
Published as: