The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2005

Filed:

Oct. 08, 2003
Applicants:

William NG, San Jose, CA (US);

Kevin Weaver, San Jose, CA (US);

Zachary Joshua Gemmill, Mountain View, CA (US);

Inventors:

William Ng, San Jose, CA (US);

Kevin Weaver, San Jose, CA (US);

Zachary Joshua Gemmill, Mountain View, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R031/307 ;
U.S. Cl.
CPC ...
Abstract

Point-by-point image contrast values are generated from secondary electron collection during unbiased electron or ion beam bombardment of an integrated circuit (IC) in a vacuum environment to quantify the physical and electrical integrity of connections within the device. These values are stored for each type of circuit cell under standard conditions to quantify and check the performance of individual cells on the device.


Find Patent Forward Citations

Ng, William. (2005). E-beam voltage potential circuit performance library (U.S. Patent No. 6952106). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6952106

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…