The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2005
Filed:
Aug. 11, 2003
Carlo Waldfried, Falls Church, VA (US);
Orlando Escorcia, Falls Church, VA (US);
Qingyuan Han, Columbia, MD (US);
Thomas Buckley, Ijamsville, MD (US);
Palani Sakthivel, Gaithersburg, MD (US);
Carlo Waldfried, Falls Church, VA (US);
Orlando Escorcia, Falls Church, VA (US);
Qingyuan Han, Columbia, MD (US);
Thomas Buckley, Ijamsville, MD (US);
Palani Sakthivel, Gaithersburg, MD (US);
Axcelis Technologies, Inc., Beverly, MA (US);
Abstract
A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is substantially free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to substantially oxygen and nitrogen free reactive species. The process can be used with carbon containing low k dielectric materials.