The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6951788 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 04, 2005

Filed:

Jan. 23, 2003
Applicant:

Nobutaka Ohyagi, Kawasaki, JP;

Inventor:

Nobutaka Ohyagi, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/8242 ;
U.S. Cl.
CPC ...
Abstract

There is provided a semiconductor device manufacturing method which comprises a step of forming titanium silicide layers (conductive patterns) on a silicon substrate (semiconductor substrate), a step of forming a cover insulating film (underlying insulating film), a step of forming a laminated film containing an alumina film (metal oxide film) on the cover insulating film, a first etching step of forming first holes in the laminated film by etching the laminated film, a cleaning step of cleaning the first holes, and a second etching step of forming second holes in the cover insulating film by etching the cover insulating film via the first holes under second etching conditions after the cleaning step.


Find Patent Forward Citations

Ohyagi, Nobutaka. (2005). Method of manufacturing semiconductor device (U.S. Patent No. 6951788). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6951788

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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