The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Feb. 06, 2003
Atsushi Moriya, Tokyo, JP;
Yasuhiro Inokuchi, Tokyo, JP;
Yasuo Kunii, Tokyo, JP;
Junichi Murota, Tokyo, JP;
Atsushi Moriya, Tokyo, JP;
Yasuhiro Inokuchi, Tokyo, JP;
Yasuo Kunii, Tokyo, JP;
Junichi Murota, Tokyo, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
This invention makes it possible to make even films composed of at least silicon and germanium with gradient germanium ratio along a film thickness direction thereof for a short deposition time. A temperature controllercontrols a heaterso that temperature of wafers W will be changed from low (e.g. 400° C.) to high (e.g. 700° C.) by alternately repeating temperature changing process to heat up the wafers W and temperature regulating process when temperature of the wafers W does not change as much as that of the temperature changing process for a specific amount of time. While a gas controllerprovides a reactive gas into a reaction tubeduring the temperature regulating process, it controls a valveto stop it during the temperature changing process.