The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Nov. 11, 2003
Applicant:
Jing-horng Gau, Hsin-Chu Hsien, TW;
Inventor:
Jing-Horng Gau, Hsin-Chu Hsien, TW;
Assignee:
United Microelectronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/20 ;
U.S. Cl.
CPC ...
Abstract
A method of forming a varactor includes forming an ion well of a first conductivity type on a substrate and a plurality of isolation structures on the ion well. The isolation structures define at least an active area on the ion well. Following that, ions of the first conductivity type are implanted into the ion well to form a doping region within the active area. A doping layer of a second conductivity type is then formed on the substrate to cover portions of the doping region. A salicide layer is formed on the doping region and the doping layer.