The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Aug. 28, 2003
Applicants:
Fukashi Harada, Kawasaki, JP;
Toshihiro Wakabayashi, Kawasaki, JP;
Inventors:
Fukashi Harada, Kawasaki, JP;
Toshihiro Wakabayashi, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L027/082 ; H01L021/302 ;
U.S. Cl.
CPC ...
Abstract
On a multilayer film which is formed on a semiconductor substrate, an opening which is opened on a base and an emitter is formed in the multilayer film, and after an SiGe/SiGeC film, which has a composition with a higher content of Si in an upper layer region and a lower layer region, and a higher content of Ge in an intermediate layer region, is formed on an entire surface, anisotropic dry etching is performed for the SiGe/SiGeC film up to a predetermined height of the opening.