The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Apr. 15, 2004
Applicants:
James F. Buller, Austin, TX (US);
David Wu, Austin, TX (US);
Scott Luning, Austin, TX (US);
Derick Wristers, Bee Caves, TX (US);
Daniel Kadosh, Austin, TX (US);
Inventors:
James F. Buller, Austin, TX (US);
David Wu, Austin, TX (US);
Scott Luning, Austin, TX (US);
Derick Wristers, Bee Caves, TX (US);
Daniel Kadosh, Austin, TX (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
Semiconductor devices with improved transistor performance are fabricated by forming a composite oxide/nitride liner under a gate electrode sidewall spacer. Embodiments include depositing a conformal oxide layer by decoupled plasma deposition, depositing a conformal nitride layer by decoupled plasma deposition, depositing a spacer layer and then etching.