The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2005
Filed:
Oct. 16, 2002
Tatsuo Sasaoka, Osaka, JP;
Naoki Suzuki, Neyagawa, JP;
Ken Kobayashi, Hirakata, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
There are provided a low pressure plasma processing apparatus and method by which a throughput can be improved, film contamination can be effectively prevented, and a film can be readily managed. A film substrate is carried in from the outside of a plasma processing apparatus main body to a substrate carrying position in the plasma processing apparatus main body, the film substrate positioned at the substrate carrying position is carried into a chamber, a reaction gas is introduced while the chamber is being evacuated, high frequency power is applied under low pressure to generate plasma so that plasma processing is performed to remove organic matter from the film substrate, and the film substrate subjected to plasma processing is taken out from the chamber and positioned at a substrate carrying-out position in the plasma processing apparatus main body and carried out of the plasma processing apparatus main body.