The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2005
Filed:
Aug. 06, 2003
Wen-yueh Jang, Hsinchu, TW;
Wen-Yueh Jang, Hsinchu, TW;
Winbond Electronics Corp., Hsinchu, TW;
Abstract
The present invention provides a resistance random access memory structure, including a plurality of word lines in a substrate, a plurality of reset lines coupled to the word lines, a dielectric layer on the substrate, a plurality of memory units in the dielectric layer. Each of the memory units includes a bottom electrode, a top electrode and a resistive thin film between the top electrode and the bottom electrode. The top electrodes of the memory units in a same column e coupled to one of the reset lines and a plurality of the bit lines on the memory units. The bottom electrodes of the memory units in a same row are coupled to one of the bit lines. Because the present invention provides reset lines for Type 1R1D RRAM, it can overcome the non-erasable of the conventional Type 1R1D RRAM.