The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2005

Filed:

Aug. 09, 2004
Applicants:

Jae Gon Lee, Singapore, SG;

Hwa Weng Koh, Singapore, SG;

Elgin Quek, Singapore, SG;

Dong Kyun Sohn, Singapore, SG;

Inventors:

Jae Gon Lee, Singapore, SG;

Hwa Weng Koh, Singapore, SG;

Elgin Quek, Singapore, SG;

Dong Kyun Sohn, Singapore, SG;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/8234 ;
U.S. Cl.
CPC ...
Abstract

A method for integrating a SONOS device with an improved top oxide with SiOgate oxides of different thickness is described. In a first embodiment during ISSG oxidation to form the SiOgate oxides, a thin sacrificial silicon nitride layer is used over the top oxide of the ONO to minimize loss and to control the top oxide thickness. In a second embodiment the top oxide layer for the SONOS device is formed by depositing an NO stack. During ISSG oxidation to form the SiOgate oxides a portion of the SiNin the NO stack is converted to SiOto form the top oxide with improved thickness control.


Find Patent Forward Citations

Lee, Jae. (2005). Method for integrating a sonos gate oxide transistor into a logic/analog integrated circuit having several gate oxide thicknesses (U.S. Patent No. 6946349). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6946349

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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