The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2005

Filed:

Apr. 24, 2003
Applicants:

Heinz Hoenigschmid, Fishkill, NY (US);

Dietmar Gogl, Fishkill, NY (US);

John Kenneth Debrosse, Colchester, VT (US);

Inventors:

Heinz Hoenigschmid, Fishkill, NY (US);

Dietmar Gogl, Fishkill, NY (US);

John Kenneth DeBrosse, Colchester, VT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C011/00 ;
U.S. Cl.
CPC ...
Abstract

A memory device includes a magnetic tunnel junction memory cell having a magnetic tunnel junction structure and a read switch. In one example, the read switch is connected to a conductor that is used to write to the magnetic tunnel junction structure. In a further example, the read switch is a transistor electrically coupled to the magnetic tunnel junction structure by a deep via contact. In a further example, the memory device includes a plurality of magnetic tunnel junction memory cells and a plurality of conductors respectively associated with the cells for writing information to the associated magnetic tunnel junction structures. Each read switch is connected to the conductor associated with a magnetic tunnel junction cell other than the cell in which the read switch resides.


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