The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2005
Filed:
Dec. 19, 2001
Applicants:
Holger Goebel, Hamburg, DE;
Heinz Hoenigschmid, Essex Junction, NY (US);
Wolfgang Hönlein, Unterhaching, DE;
Thomas Haneder, Dachau, DE;
Inventors:
Holger Goebel, Hamburg, DE;
Heinz Hoenigschmid, Essex Junction, NY (US);
Wolfgang Hönlein, Unterhaching, DE;
Thomas Haneder, Dachau, DE;
Assignee:
Infineon Technologies AG, , DE;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C011/12 ;
U.S. Cl.
CPC ...
Abstract
The state is read out from the ferroelectric transistor or stored in the ferroelectric transistor. During the read-out or storage of the state, at least one further ferroelectric transistor in the memory matrix is driven in such a way that it is operated in its depletion region.