The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2005
Filed:
Jul. 02, 2001
Stanley Joseph Whitehair, Peekskill, NY (US);
Stephen Mcconnell Gates, Ossining, NY (US);
Sampath Purushothaman, Yorktown Heights, NY (US);
Satyanarayana V. Nitta, Poughquag, NY (US);
Maurice Mcglashan-powell, Yonkers, NY (US);
Kevin S. Petrarca, Newburgh, NY (US);
Stanley Joseph Whitehair, Peekskill, NY (US);
Stephen McConnell Gates, Ossining, NY (US);
Sampath Purushothaman, Yorktown Heights, NY (US);
Satyanarayana V. Nitta, Poughquag, NY (US);
Maurice McGlashan-Powell, Yonkers, NY (US);
Kevin S. Petrarca, Newburgh, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Novel semiconductor devices containing a discontinuous cap layer and possessing a relatively low dielectric constant are provide herein. The novel semiconductor devices includes at least a substrate, a first dielectric layer applied on at least a portion of the substrate, a first set of openings formed through the dielectric layer to expose the surface of the substrate so that a conductive material deposited within and filling the openings provides a first set of electrical contact conductive elements and a discontinuous layer of cap material covering at least the top of the conductive elements to provide a first set of discontinuous cap elements. Methods for forming the semiconductor devices are also provided.