The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2005

Filed:

Apr. 13, 2004
Applicant:

Jing-horng Gau, Hsinchu Hsien, TW;

Inventor:

Jing-Horng Gau, Hsinchu Hsien, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L027/108 ;
U.S. Cl.
CPC ...
Abstract

A varactor is provided. The varactor includes a second type substrate, two gate structures, a first type doped region and a second type doped region. The two gate structures are disposed over the substrate, and each of the gate structures includes an inter-gate dielectric layer and a gate conductive layer. The first type doped region is disposed in the substrate between the two gate structures. The second type doped region is disposed in the substrate at a side of the two gate structures apart from the first type doped region. The first type doped region is electrically connected to a first electrode, and second type doped region is electrically connected to a second electrode, and the two gate structures are electrically connected to the first electrode or the second electrode.


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