The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2005

Filed:

Jun. 30, 2004
Applicants:

Michael A. Vanbuskirk, Saratoga, CA (US);

Colin Bill, Cupertino, CA (US);

Tzu-ning Fang, Palo Alto, CA (US);

Zhida Lan, Cupertino, CA (US);

Inventors:

Michael A. VanBuskirk, Saratoga, CA (US);

Colin Bill, Cupertino, CA (US);

Tzu-Ning Fang, Palo Alto, CA (US);

Zhida Lan, Cupertino, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L051/00 ;
U.S. Cl.
CPC ...
Abstract

The present invention facilitates semiconductor devices by aiding the efficiency in the way individual devices change states in a semiconductor array. State change voltages can be applied to a single device in the array of semiconductor devices without the need for transistor-type voltage controls. The diodic effect of the present invention facilitates this activity by allowing specific voltage levels necessary for state changes to only occur at the desired device. In this manner, an array of devices can be programmed with varying data or states without utilizing transistor technology. The present invention also allows for an extremely efficient method of producing these types of devices, eliminating the need to manufacture costly external voltage controlling semiconductor devices.


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