Method for reducing semiconductor resistance, device for reducing semiconductor resistance and semiconductor element

Abstract

To lower the electrical resistance of a p-type semiconductor or the operation voltage of a light-emitting/light-receiving semiconductor device. An ion-plasma-type electron-beam irradiation apparatusgenerates wide-area-radiation electron beams. The thus-generated electron beams are radiated to the outside through a thin metallic plateformed on the outer surface of a beam extraction window. A p-type semiconductor is disposed below the beam extraction windowsuch that the p-type semiconductor is disposed about 20 mm away from the electron extraction window so as to be almost parallel to the metallic plate. When the surface of the p-type semiconductor is irradiated with electron beams by use of this apparatus, the electrical resistance of the p-type semiconductor can be effectively lowered within a short period of time; i.e., within about three minutes, which is considerably shorter than the time required in the case where a conventional electron-beam irradiation apparatus is employed. No particular limitation is imposed on the area of the beam extraction window, and thus wide-area-radiation electron beams are generated, and as a result, scanning with electron beams is not required to be repeated over a long period of time.