The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2005
Filed:
Jan. 13, 2001
Hiroaki Tsugane, Sakata, JP;
Hisakatsu Sato, Sakata, JP;
Hiroaki Tsugane, Sakata, JP;
Hisakatsu Sato, Sakata, JP;
Seiko Epson Corp., Tokyo, JP;
Abstract
Certain embodiments of the present invention relate to a method for manufacturing a semiconductor device, in which, when a cell capacitor of a DRAM and a capacitor element in an analog element region are mix-mounted on the same chip, the manufacturing steps can be simplified. First, the lower electrodesandof the capacitor elementsandand the storage nodesandof the cell capacitorsandare simultaneously formed. Next, a dielectric layer (ON layer) of the capacitor elementsandand a dielectric layer (ON layer) of the cell capacitorsandare simultaneously formed. Then, the upper electrodesandof the capacitor elementsandand the cell plateof the cell capacitorsandare simultaneously formed.