The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6943077 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 13, 2005

Filed:

Apr. 07, 2003
Applicants:

Ai-sen Liu, Hsinchu, TW;

Baw-ching Perng, Hsin-Chu, TW;

Ming-ta Lei, Hsin-Chu, TW;

Yih-shung Lin, San Chung, TW;

Cheng-chung Lin, Taipei, TW;

Chia-hui Lin, Hsin-Chu, TW;

Inventors:

Ai-Sen Liu, Hsinchu, TW;

Baw-Ching Perng, Hsin-Chu, TW;

Ming-Ta Lei, Hsin-Chu, TW;

Yih-Shung Lin, San Chung, TW;

Cheng-Chung Lin, Taipei, TW;

Chia-Hui Lin, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/8238 ;
U.S. Cl.
CPC ...
Abstract

A method of forming spacers with different widths on a semiconductor substrate, includes the steps of disposing a first spacer layer over the substrate, defining the first spacer layer into a plurality of spacers of a first width, and disposing a second spacer layer selectively over the first spacer layer of a number of the spacers preselected for the second spacer layer, the predetermined number of the spacers with the second spacer layer each having a second width which is different from the first width.


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Liu, Ai-Sen. (2005). Selective spacer layer deposition method for forming spacers with different widths (U.S. Patent No. 6943077). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6943077

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