The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Jul. 09, 2003
Applicants:
Yue-song He, San Jose, CA (US);
Richard M. Fastow, Cupertino, CA (US);
Jianshi Wang, San Jose, CA (US);
Inventors:
Yue-Song He, San Jose, CA (US);
Richard M. Fastow, Cupertino, CA (US);
Jianshi Wang, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/8247 ;
U.S. Cl.
CPC ...
Abstract
The present invention is a method for fabricating a flash memory device. In one embodiment, a gate structure comprising a tunnel oxide layer, a floating gate layer, an oxide layer, and a control gate layer is fabricated on a semiconductor substrate. A rapid thermal oxidation (RTO) process is then performed to repair the tunnel oxide layer.