The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2005
Filed:
Apr. 25, 2002
Jun-ya Ishizaki, Annaka, JP;
Jun-ya Ishizaki, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
When a p-type MgZnO-type layer is grown based on a metal organic vapor-phase epitaxy process, the p-type MgZnO-type layer is annealed in an oxygen-containing atmosphere during and/or after completion of the growth of the p-type MgZnO-type layer. In addition, a vapor-phase epitaxy process of a semiconductor layer is proceed while irradiating ultraviolet light to the surface of a substrate to be grown and source gasses. In addition, when a MgZnO-type buffer layer that is oriented so as to align the c-axis thereof to a thickness-wise direction is formed by an atomic layer epitaxy process, a metal monoatomic layer is grown at first. In addition, a ZnO-base semiconductor active layer is formed by using a semiconductor material mainly composed of ZnO containing Se or Te. A light emitting device is formed by using these techniques.