The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2005

Filed:

Oct. 24, 2003
Applicants:

Wu-song Huang, Poughkeepsie, NY (US);

Robert D. Allen, San Jose, CA (US);

Marie Angelopoulos, Cortlandt Manor, NY (US);

Ranee W. Kwong, Wappingers Falls, NY (US);

Ratnam Sooriyakumaran, San Jose, CA (US);

Inventors:

Wu-Song Huang, Poughkeepsie, NY (US);

Robert D. Allen, San Jose, CA (US);

Marie Angelopoulos, Cortlandt Manor, NY (US);

Ranee W. Kwong, Wappingers Falls, NY (US);

Ratnam Sooriyakumaran, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03E007/004 ;
U.S. Cl.
CPC ...
Abstract

Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.


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