The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
May. 16, 2002
Shu-wen Sung, Hsin-Chu, TW;
Chin-fu Ku, Hsin-Chu, TW;
Chia-cheng Liu, Hsin-Chu, TW;
Min-hsun Hsieh, Hsin-Chu, TW;
Chao-nien Huang, Hsin-Chu, TW;
Chen Ou, Hsin-Chu, TW;
Chuan-ming Chang, Hsin-Chu, TW;
Shu-Wen Sung, Hsin-Chu, TW;
Chin-Fu Ku, Hsin-Chu, TW;
Chia-Cheng Liu, Hsin-Chu, TW;
Min-Hsun Hsieh, Hsin-Chu, TW;
Chao-Nien Huang, Hsin-Chu, TW;
Chen Ou, Hsin-Chu, TW;
Chuan-Ming Chang, Hsin-Chu, TW;
Epistar Corporation, Hsin-Chu, TW;
Abstract
An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n-type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding layer positioned on the first surface of the n-type contact layer; a light-emitting layer positioned on the n-type cladding layer; a p-type cladding layer positioned on the light-emitting layer; a p-type contact layer positioned on the p-type cladding layer; an n-type reverse-tunneling layer positioned on the p-type contact layer; a p-type transparent ohmic contact electrode positioned on the n-type reverse-tunneling layer; and an n-type transparent ohmic contact electrode positioned on the second surface of the n-type contact layer. The p-type transparent ohmic contact electrode and the n-type transparent ohmic contact electrode are made of the same materials.