The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
Mar. 11, 2003
Applicants:
Yai-yei Huang, Hsinchu, TW;
Yuh-da Fan, Hsinchu, TW;
Inventors:
Yai-Yei Huang, Hsinchu, TW;
Yuh-Da Fan, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/302 ;
U.S. Cl.
CPC ...
Abstract
A method for reducing wafer surface scratching in a metal CMP process including providing a semiconductor wafer having a process surface comprising a blanket deposited metal layer; dry etching in an etchback process comprising a fluorine containing etching chemistry to remove at least a portion of the metal layer forming a metal and fluorine containing etching residue at the process surface; cleaning the process surface with a hydrofluoric acid (HF) containing cleaning solution; and carrying out a subsequent metal chemical mechanical polishing (CMP) process.