The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
May. 22, 2003
James F. Buller, Austin, TX (US);
Derick J. Wristers, Bee Caves, TX (US);
Qi Xiang, San Jose, CA (US);
Bin Yu, Cupertino, CA (US);
James F. Buller, Austin, TX (US);
Derick J. Wristers, Bee Caves, TX (US);
Qi Xiang, San Jose, CA (US);
Bin Yu, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of manufacturing a semiconductor device includes providing a strained-silicon semiconductor layer over a silicon germanium layer, and partially removing a first portion of the strained-silicon layer. The strained-silicon layer includes the first portion and a second portion, and a thickness of the second portion is greater than a thickness of the first portion. Initially, the first and second portions of the strained-silicon layer initially can have the same thickness. A p-channel transistor is formed over the first portion, and a n-channel transistor is formed over the second portion. A semiconductor device is also disclosed.