The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Jan. 28, 2003
Youhei Yanagida, Hamura, JP;
Katsuhiko Ichinose, Ome, JP;
Tomohiro Saito, Tachikawa, JP;
Shinichiro Mitani, Tokorozawa, JP;
Youhei Yanagida, Hamura, JP;
Katsuhiko Ichinose, Ome, JP;
Tomohiro Saito, Tachikawa, JP;
Shinichiro Mitani, Tokorozawa, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
An impurity ion of a polarity opposite to that of an impurity ion forming an n-type diffusion layer is implanted into a lower portion of the n-type diffusion region in a region, in which n-channel type MISFET is to be formed, vertically with respect to a main surface of a semiconductor to form a first p-type pocket layer. Subsequently, an impurity of a p conduction type is implanted into a region between the n-type diffusion region and the first p-type pocket layer obliquely relative to the main surface of the semiconductor substrate to form a second p-type pocket layer. In this arrangement, the concentration of the impurity ion forming the second p-type pocket layer is made higher than the concentration of the impurity ion used to form the first p-type pocket layer.