The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Oct. 14, 1998
James E. Green, Caldwell, ID (US);
Darwin A. Clampitt, Boise, ID (US);
James E. Green, Caldwell, ID (US);
Darwin A. Clampitt, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A honeycomb/webbed, high surface area capacitor formed by etching a storage poly using an etch mask having a plurality of micro vias. The etch mask is preferably formed by applying an HSG polysilicon layer on a surface of the storage poly with a mask layer being deposited over the HSG polysilicon layer. An upper portion of the mask layer is removed to expose the uppermost portions of the HSG polysilicon layer and the exposed HSG polysilicon layer portions are then etched, which translates the pattern of the exposed HSG polysilicon layer portions into the storage poly. The capacitor is completed by depositing a dielectric material layer over the storage poly layer and depositing a cell poly layer over the dielectric material layer.