The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2005
Filed:
Oct. 21, 2002
Applicants:
Masahiro Totsuka, Tokyo, JP;
Tomoki Oku, Tokyo, JP;
Ryo Hattori, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L021/31 ;
U.S. Cl.
CPC ...
Abstract
A process of manufacturing a semiconductor device uses catalytic chemical vapor deposition. In the process, a reaction chamber containing a catalyzer and a substrate has gasses, including silane, ammonia, and hydrogen supplied to the reaction chamber. The gases are brought into contact with the catalyzer and then with the substrate to deposit a silicon nitride film.